Tulkot latviski

Transistor: IGBT | 650V | 40A | 125W | TO247-3

EB Kods: EB1093597601

Ražotāja preces kods: 
WG40N65DFWQ

Ražotājs, zīmols: 
WeEn Semiconductors

3,23 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
-+

Product Properties

Type of transistorIGBT
Collector-emitter voltage650V
Collector current40A
Power dissipation125W
CaseTO247-3
Gate-emitter voltage±20V
Pulsed collector current120A
MountingTHT
Gate charge173nC
Kind of packagetube
Turn-on time95ns
Turn-off time378ns
Features of semiconductor devicesintegrated anti-parallel diode