Tulkot latviski

Transistor: IGBT | 650V | 10A | 115W | TO220AB

EB Kods: EB1282121608

Ražotāja preces kods: 
STGP10M65DF2

Ražotājs, zīmols: 
STMicroelectronics

1,72 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorIGBT
Collector-emitter voltage650V
Collector current10A
Power dissipation115W
CaseTO220AB
Gate-emitter voltage±20V
Pulsed collector current40A
MountingTHT
Gate charge28nC
Kind of packagetube
Features of semiconductor devicesintegrated anti-parallel diode