Tulkot latviski

Transistor: IGBT | 600V | 29A | 313W | TO220

EB Kods: EB755432881

Ražotāja preces kods: 
DG20X06T1

Ražotājs, zīmols: 
STARPOWER SEMICONDUCTOR

2,59 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
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Product Properties

Type of transistorIGBT
Collector-emitter voltage600V
Collector current29A
Power dissipation313W
CaseTO220
Gate-emitter voltage±20V
Pulsed collector current60A
MountingTHT
Gate charge0.14µC
Kind of packagetube
Turn-on time26ns
Turn-off time200ns
Features of semiconductor devicesintegrated anti-parallel diode