Tulkot latviski

Transistor: IGBT | 1200V | 50A | 592W | TO247PLUS

EB Kods: EB1853425349

Ražotāja preces kods: 
DG50X12T2

Ražotājs, zīmols: 
STARPOWER SEMICONDUCTOR

12,02 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorIGBT
Collector-emitter voltage1.2kV
Collector current50A
Power dissipation592W
CaseTO247PLUS
Gate-emitter voltage±20V
Pulsed collector current150A
MountingTHT
Gate charge0.35µC
Kind of packagetube
Turn-on time180ns
Turn-off time607ns
Features of semiconductor devicesintegrated anti-parallel diode