Tulkot latviski

Transistor: IGBT | 1200V | 10A | 96W | TO247

EB Kods: EB1210025398

Ražotāja preces kods: 
DG10X12T2

Ražotājs, zīmols: 
STARPOWER SEMICONDUCTOR

3,40 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
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Product Properties

Type of transistorIGBT
Collector-emitter voltage1.2kV
Collector current10A
Power dissipation96W
CaseTO247
Gate-emitter voltage±20V
Pulsed collector current30A
MountingTHT
Gate charge80nC
Kind of packagetube
Turn-on time37ns
Turn-off time493ns
Features of semiconductor devicesintegrated anti-parallel diode