Tulkot latviski

Transistor: IGBT | BiMOSFET™ | 3kV | 42A | 500W | TO268HV

EB Kods: EB1792361636

Ražotāja preces kods: 
IXBT42N300HV

Ražotājs, zīmols: 
IXYS

69,69 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorIGBT
TechnologyBiMOSFET™
Collector-emitter voltage3kV
Collector current42A
Power dissipation500W
CaseTO268HV
Gate-emitter voltage±20V
Pulsed collector current400A
MountingSMD
Gate charge200nC
Kind of packagetube
Turn-on time652ns
Turn-off time950ns
Features of semiconductor deviceshigh voltage