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Transistor: N-MOSFET | unipolar | 60V | 300mA | Idm: 0.8A | 350mW | SOT23

EB Kods: EB1201373918

Ražotāja preces kods: 
DMN601K-7

Ražotājs, zīmols: 
DIODES INCORPORATED

0,0461 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
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Product Properties

Type of transistorN-MOSFET
Polarisationunipolar
Drain-source voltage60V
Drain current0.3A
Pulsed drain current0.8A
Power dissipation0.35W
CaseSOT23
Gate-source voltage±20V
On-state resistance3Ω
MountingSMD
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor devicesESD protected gate