Tulkot latviski

Transistor: N-MOSFET | unipolar | 100V | 170mA | Idm: 0.68A | 500mW

EB Kods: EB1752921259

Ražotāja preces kods: 
BSS123_R1_00001

Ražotājs, zīmols: 
PanJit Semiconductor

0,0757 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
Polarisationunipolar
Drain-source voltage100V
Drain current0.17A
Pulsed drain current0.68A
Power dissipation0.5W
CaseSOT23
Gate-source voltage±20V
On-state resistance10Ω
MountingSMD
Gate charge1.8nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced