Tulkot latviski
Transistor: N-MOSFET x2 | unipolar | 50V | 350mA | Idm: 1.2A | 223mW
Transistor: N-MOSFET x2 | unipolar | 50V | 350mA | Idm: 1.2A | 223mW
EB Kods: EB832837710
Ražotāja preces kods: PJX138K_R1_00001
Ražotāja preces kods:
PJX138K_R1_00001
Ražotājs, zīmols: PanJit Semiconductor
Ražotājs, zīmols:
PanJit Semiconductor
0,22 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET x2 |
| Polarisation | unipolar |
| Drain-source voltage | 50V |
| Drain current | 0.35A |
| Pulsed drain current | 1.2A |
| Power dissipation | 223mW |
| Case | SOT563 |
| Gate-source voltage | ±20V |
| On-state resistance | 4.5Ω |
| Mounting | SMD |
| Gate charge | 1nC |
| Kind of package | reel |
| Kind of package | tape |
| Kind of channel | enhanced |