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Transistor: N-MOSFET x2 | unipolar | 30V | 0.9A | Idm: 9.6A | 0.32W

EB Kods: EB741871071

Ražotāja preces kods: 
DMN3190LDW-7

Ražotājs, zīmols: 
DIODES INCORPORATED

0,24 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
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Product Properties

Type of transistorN-MOSFET x2
Polarisationunipolar
Drain-source voltage30V
Drain current0.9A
Pulsed drain current9.6A
Power dissipation0.32W
CaseSOT363
Gate-source voltage±20V
On-state resistance0.19Ω
MountingSMD
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor devicesESD protected gate