Tulkot latviski
Module: IGBT | transistor/transistor | IGBT half-bridge | Ic: 150A
Module: IGBT | transistor/transistor | IGBT half-bridge | Ic: 150A
EB Kods: EB780015112
Ražotāja preces kods: HFGM150D12V3
Ražotāja preces kods:
HFGM150D12V3
Ražotājs, zīmols: HUAJING
Ražotājs, zīmols:
HUAJING
88,61 €
Ar PVN / gb
Pieejams piegādātāja noliktavā 2 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of module | IGBT |
Semiconductor structure | transistor/transistor |
Topology | IGBT half-bridge |
Max. off-state voltage | 1.2kV |
Collector current | 150A |
Case | V3 62MM |
Application | for UPS |
Application | Inverter |
Electrical mounting | FASTON connectors |
Electrical mounting | screw |
Gate-emitter voltage | ±30V |
Pulsed collector current | 350A |
Technology | PT |
Mechanical mounting | screw |