Tulkot latviski
Module: IGBT | transistor/transistor | IGBT half-bridge | Ic: 100A
Module: IGBT | transistor/transistor | IGBT half-bridge | Ic: 100A
EB Kods: EB1164753186
Ražotāja preces kods: FF100R12RT4HOSA1
Ražotāja preces kods:
FF100R12RT4HOSA1
Ražotājs, zīmols: INFINEON TECHNOLOGIES
Ražotājs, zīmols:
INFINEON TECHNOLOGIES
102,26 €
Ar PVN / gb
Pieejams piegādātāja noliktavā 1 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of module | IGBT |
Semiconductor structure | transistor/transistor |
Topology | IGBT half-bridge |
Max. off-state voltage | 1.2kV |
Collector current | 100A |
Case | AG-34MM |
Electrical mounting | FASTON connectors |
Electrical mounting | screw |
Gate-emitter voltage | ±20V |
Pulsed collector current | 200A |
Power dissipation | 555W |
Mechanical mounting | screw |