• Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 56A | SOT227B image 1
  • Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 56A | SOT227B image 2
  • Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 56A | SOT227B image 3
  • Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 56A | SOT227B image 4
  • Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 56A | SOT227B image 5
  • Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 56A | SOT227B image 6
  • Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 56A | SOT227B image 7
  • Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 56A | SOT227B image 8
  • Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 56A | SOT227B image 9
Tulkot latviski

Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 56A | SOT227B

EB Kods: EB32637273

Ražotāja preces kods: 
IXA60IF1200NA

Ražotājs, zīmols: 
IXYS

34,26 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
-+

Product Properties

Type of moduleIGBT
Semiconductor structuresingle transistor
Max. off-state voltage1.2kV
Collector current56A
CaseSOT227B
Electrical mountingscrew
Gate-emitter voltage±20V
Pulsed collector current150A
Power dissipation290W
TechnologyXPT™
Features of semiconductor deviceshigh voltage
Mechanical mountingscrew