• Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 29A | SOT227B image 1
  • Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 29A | SOT227B image 2
  • Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 29A | SOT227B image 3
  • Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 29A | SOT227B image 4
  • Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 29A | SOT227B image 5
  • Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 29A | SOT227B image 6
  • Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 29A | SOT227B image 7
  • Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 29A | SOT227B image 8
  • Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 29A | SOT227B image 9
Tulkot latviski

Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 29A | SOT227B

EB Kods: EB541065515

Ražotāja preces kods: 
APT35GP120J

Ražotājs, zīmols: 
MICROCHIP (MICROSEMI)

50,96 €
Ar PVN / gb
Pieejams piegādātāja noliktavā 1 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
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Product Properties

Type of moduleIGBT
Semiconductor structuresingle transistor
Max. off-state voltage1.2kV
Collector current29A
CaseSOT227B
Electrical mountingscrew
Gate-emitter voltage±30V
Pulsed collector current140A
TechnologyPOWER MOS 7®
TechnologyPT
Mechanical mountingscrew