Tulkot latviski
Module: IGBT | diode/transistor | boost chopper | Urmax: 1.2kV | screw
Module: IGBT | diode/transistor | boost chopper | Urmax: 1.2kV | screw
EB Kods: EB1204424031
Ražotāja preces kods: SKM150GAL12T4 22892300
Ražotāja preces kods:
SKM150GAL12T4 22892300
Ražotājs, zīmols: SEMIKRON DANFOSS
Ražotājs, zīmols:
SEMIKRON DANFOSS
110,38 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of module | IGBT |
| Semiconductor structure | diode/transistor |
| Topology | boost chopper |
| Max. off-state voltage | 1.2kV |
| Collector current | 179A |
| Case | SEMITRANS2 |
| Application | for UPS |
| Application | frequency changer |
| Application | Inverter |
| Application | photovoltaics |
| Electrical mounting | FASTON connectors |
| Electrical mounting | screw |
| Gate-emitter voltage | ±20V |
| Pulsed collector current | 450A |
| Mechanical mounting | screw |