Tulkot latviski

Module: IGBT | diode/transistor | boost chopper | Urmax: 1200V | L3.0

EB Kods: EB2101475161

Ražotāja preces kods: 
GD35PJY120L3S

Ražotājs, zīmols: 
STARPOWER SEMICONDUCTOR

54,82 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
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Product Properties

Type of moduleIGBT
Semiconductor structurediode/transistor
Topologyboost chopper
TopologyIGBT three-phase bridge OE output
TopologyNTC thermistor
Topologythree-phase diode bridge
Max. off-state voltage1.2kV
Collector current35A
CaseL3.0
Electrical mountingPress-in PCB
Gate-emitter voltage±20V
Pulsed collector current70A
TechnologyAdvanced Trench FS IGBT
Mechanical mountingscrew